Nitride Wide Bandgap Semiconductor Material and Electronic Devices - Hao, Yue (Xidian University, Xi'an, PR of China) - Books - Taylor & Francis Inc - 9781498745123 - October 3, 2016
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Nitride Wide Bandgap Semiconductor Material and Electronic Devices 1st edition

Hao, Yue (Xidian University, Xi'an, PR of China)

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices 1st edition

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).

388 pages, 469 black & white illustrations, 30 black & white tables

Media Books     Hardcover Book   (Book with hard spine and cover)
Released October 3, 2016
ISBN13 9781498745123
Publishers Taylor & Francis Inc
Pages 392
Dimensions 262 × 184 × 22 mm   ·   894 g
Language English  

See all of Hao, Yue (Xidian University, Xi'an, PR of China) ( e.g. Paperback Book and Hardcover Book )