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Nitride Wide Bandgap Semiconductor Material and Electronic Devices 1st edition
Hao, Yue (Xidian University, Xi'an, PR of China)
Nitride Wide Bandgap Semiconductor Material and Electronic Devices 1st edition
Hao, Yue (Xidian University, Xi'an, PR of China)
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).
392 pages
Media | Books Paperback Book (Book with soft cover and glued back) |
Released | June 30, 2020 |
ISBN13 | 9780367574369 |
Publishers | Taylor & Francis Ltd |
Pages | 392 |
Dimensions | 771 g |
Language | English |