Scanning Capacitance Microscopy: and Spectroscopy on Semiconductor Materials German edition

In this PhD-thesis, Scanning Capacitance Microscopy(SCM) and Scanning Capacitance Spectroscopy (SCS) was appliedto investigate various silicon samples. SCM is used to investigatethe electrical behaviour of samples with a lateral resolution below100 nm. The work is divided into 3 major experimental parts: (1)the properties of metal organic chemical vapour deposited zirconiumdioxide as dielectric material for SCM was explored. Usage ofzirconium dioxide leads to reduced leakage currents andimproved signal quality. (2) focussed ion beam induced damage insilicon was investigated with SCM. The beam shape and the rangeof ion damage inside the sample was investigated. The SCMdata were compared with transmission electron microscopy data.(3) a setup for quantitative Scanning Capacitance Spectroscopywith an external capacitance bridge connected to an atomic forcemicroscope was designed. This setup is sensitive enough to resolvethe energetic distribution of interface trapped charges and toquantitatively measure the local oxide charge density distributionof zirconium dioxide layers.