Fundamentals of Nanoscale Film Analysis: Fundamentals and Techniques 1st Ed. Softcover of Orig. Ed. 2007 edition

Jacket Description/Back: Modern science and technology, from materials science to integrated circuit development, is directed toward the nanoscale. From thin films to field effect transistors, the emphasis is on reducing dimensions from the micro to the nanoscale. Fundamentals of Nanoscale Film Analysis concentrates on analysis of the structure and composition of the surface and the outer few tens to hundred nanometers in depth. It describes characterization techniques to quantify the structure, composition and depth distribution of materials with the use of energetic particles and photons. The book describes the fundamentals of materials characterization from the standpoint of the incident photons or particles which interrogate nanoscale structures. These induced reactions lead to the emission of a variety of detected of particles and photons. It is the energy and intensity of the detected beams that is the basis of the characterization of the materials. The array of experimental techniques used in nanoscale materials analysis covers a wide range of incident particle and detected beam interactions. Included are such important interactions as atomic collisions, Rutherford backscattering, ion channeling, diffraction, photon absorption, radiative and nonradiative transitions, and nuclear reactions. A variety of analytical and scanning probe microscopy techniques are presented in detail. Description for Sales People: Modern science and technology, from materials science to integrated circuit development, is directed toward the nanoscale. This book focuses on the fundamental physics underlying the techniques used to analyze the nature of surfaces and near-surfaces in the properties of materials. From thin films to field effect transistors, the emphasis is on reducing dimensions from the micro to the nanoscale. Coverage includes new analytical techniques, such as x-ray fluorescence (XRF) in thin film analysis. This volume updates (with a nano focus) the well regarded 1986 book, Surface and Thin Film Analysis, by Feldman and Mayer. Table of Contents: An Overview: Concepts, Units, and the Bohr Atom.- Atomic Collisions and Backscattering Spectrometry.- Energy Loss of Light Ions and Backscattering Depth Profiles.- Sputter Depth Profiles and Secondary Ion Mass Spectroscopy.- Ion Channeling.- Electron-Electron Interactions and the Depth Sensitivity of Electron Spectroscopies.- X-ray Diffraction.- Electron Diffraction.- Photon Absorption in Solids and EXAFS.- X-ray Photoelectron Spectroscopy.- Radiative Transitions and the Electron Microprobe.- Nonradiative Transitions and Auger Electron Spectroscopy.- Nuclear Techniques: Activation Analysis and Prompt Radiation Analysis.- Scanning Probe Microscopy. Publisher Marketing: From materials science to integrated circuit development, much of modern technology is moving from the microscale toward the nanoscale. This book focuses on the fundamental physics underlying innovative techniques for analyzing surfaces and near-surfaces. New analytical techniques have emerged to meet these technological requirements, all based on a few processes that govern the interactions of particles and radiation with matter. This book addresses the fundamentals and application of these processes, from thin films to field effect transistors.

Contributor Bio:  Mayer, James W James W. Mayer is the Galvin Professor of Science and Engineering and Regents Professor at Arizona State University. He has investigated thin film phenomena and metallization for integrated circuits over the pasttwo decades. He has coauthored and coedited books on thin films, silicides and ion implantation. Previously he was the F. N. Bard Professor of Materials Science at Cornell University and before this, Professor of Electrical Engineering at the California Institute of Technology. He received his Ph. D. in Physics at Purdue University and was a member of the technical staff at Hughes Research Laboratories. He is known for his work on nuclear particle detectors and Rutherford backscattering analysis. He is a Fellow of the IEEE and the American Physical Society and a member of the National Academy of Engineering. Dr. Terry L. Alford is a professor of materials engineering in the Department of Chemical and Materials Engineering at Arizona State University. His book, Nanoscale Thin Film Analysis, co-authored with L. Feldman and J. Mayer will be published by Springer in March 2006. Dr. Alford received his Ph. D. from Cornell University and was employed by Texas Instruments. He has had extensive consulting experience with Philips Semiconductors, Freescale Semiconductors, and Motorola. He has published extensively on the properties of thin films and the use of analysis techniques to characterize the films. Daniel Adams is a professor of Physics in the Department of Physics at the University of the Western Cape, South Africa. He has extensively investigated silver and copper metallization for the past ten years. He was the leading author of a review article, entitled: "Encapsulated Silver for Integrated Circuit metallization," published in Materials Science and Engineering: R. Reports, 40, 207-250(2003). Apart from an extensive list of publications on thin film phenomena and metallization he also co-authored a chapter on "Spectroscopy and Spectrometry" in the Encyclopedia of Condensed Matter Physics, May 2005. Professor Adams received his PhD in Materials Engineering from Arizona State University, USA.